Your browser does not support JavaScript!

 
馮世維老師 教師著作

 

Publication List of Associate Professor Shih-Wei Feng

(A)  Book Chapter

Shih-Wei Feng* and Hsiang-Chen Wang, Chapter Title“Carrier Transport and Recombination Dynamics in Disordered Organic Light Emitting Diodes” in “Organic Light Emitting Diode” (ISBN 978-953-307-273-9 in Sciyo.com) 2010 Sep.

 

(B)  專利

1.      王祥辰、黃世賢、劉育松、馮世維、丁初稷用於太陽能電池之多雷射光束表面粗化方法以及具粗化表面的太陽能電池中華民國專利發明第I398012(專利權期間201361日至2029113)

2.      王祥辰、吳建昇、劉育松、馮世維、丁初稷,具低反射表面結構的太陽能電池,中華民國發明專利I401815(專利權期間2013711日至2029112)

3.      王祥辰、吳建昇、劉育松、馮世維、丁初稷,具高吸收效率表面結構的太陽能電池,中華民國發明專利I415276(專利權期間20131111日至20291021)

 

(C) Journal Publications (*corresponding author)

有此圖示""者,可點圖示詳閱全文。

2015

1.      Chih-Ming Lai, Yu-En Huang, Kuang-Yang Kou, Chien-Hsun Chen, Li-Wei Tu, and Shih-Wei Feng*, “Experimental and theoretical study of polarized luminescence caused by anisotropic strain relaxation in nonpolar a-plane textured ZnO grown by a low-pressure chemical vapor deposition,” Applied Physics Letters, Vol. 107, Issue 2, pp. 022110 (4 pages), 2015 July. (SCI impact factor 3.302) (Ranking in Physics, Applied20/136)

2.      Shih-Wei Feng,* Po-Hsun Liao, Benjamin Leung, Jung Han, Fann-Wei Yang, and Hsiang-Chen Wang, “Efficient carrier relaxation and high radiative decay rate of N-polar InGaN/GaN light emitting diodes,” Journal of Applied Physics, Vol. 118, Issue 4, pp. 043104 (5 pages), 2015 July. (SCI impact factor 2.183) (Ranking in Physics, Applied39/136)

3.      Hsiang-Chen Wang*, Shih-Wei Huang, Jhe-Ming Yang, Guan-Huang Wu, Ya-Ping Hsieh, Shih-Wei Feng, Min Kai Lee, and Chie-Tong Kuo, “Large-area few-layered graphene film determination by multispectral imaging microscopy”, Nanoscale, Vol 7, Issue 19, pp. 9033-9039, 2015 May. (SCI impact factor 6.739) (Ranking in Physics, Applied: 14/136).

4.      L. M. Yang, C. Y. Pan, F. P. Lu, C. W. Chang, S. W. Feng, L. W. Tu*, “Anti-reflection sub-wavelength structures design for InGaN-based solar cells performed by the finite-difference-time-domain (FDTD) simulation method,” Optics and Laser Technology, Vol. 67, pp. 72-77, 2015 April.  (SCI impact factor 1.649) (Ranking in Optics: 29/82)

 

      2014

5.      Shih-Wei Feng*, “Dependence of the Dynamics of Exciton Transport, Energy Relaxation, and Localization on Dopant Concentration in Disordered C545T-doped Alq3 Organic Semiconductors,” Optical Materials Express, Vol. 4, Issue 4, pp. 798-809, 2014 April. (SCI impact factor 2.923) (Ranking in Optics: 14/83)

6.      Shih-Wei Feng*, Chih-Ming Lai, Chin-Yi Tsai, and Li-Wei Tu, Numerical simulations of the current-matching effect and operation mechanisms on the performance of InGaN/Si tandem cells,” Nanoscale Research Letters, Vol 9, Issue 1, pp. 652(10 pages), 2014 Dec. (SCI impact factor 2.481) (Ranking in Physics, Applied: 31/136)

2013

7.      Shih-Wei Feng*, Yu-Yu Chen, Chih-Ming Lai, Li-Wei Tu, and Jung Han, “Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate”, Journal of Applied Physics, Vol. 114, Issue 23, pp. 233103 (6 pages), 2013 Dec. (SCI impact factor 2.210) (Ranking in Physics, Applied31/127)點我看全文

8.      Shih-Wei Feng*, Chih-Ming Lai, Chin-Yi Tsai, Yu-Ru Su, and Li-Wei Tu, Modeling of InGaN p-n junction solar cells,” Optical Materials Express, Vol. 3, Issue 10, pp. 1777-1788, 2013 Oct. (SCI impact factor 2.616) (Ranking in Optics: 10/79)點我看全文

9.      Jenn-Ming Song*, Shih-Yun Chen, Yu-Lin Shen, Chi-Hang Tsai, Shih-Wei Feng, Hsien-Tse Tung, In-Gann Chen, “Effect of surface physics of metal oxides on the ability to formmetallic nanowires,” Applied Surface Science, Vol. 285, Part B, pp. 450-457, 2013 Nov. (SCI impact factor 2.112) (Ranking in Materials Science, Coatings & Films2/17)點我看全文

10.      P. V. Wadekar, Q. Y. Chen, H. C. Huang, Y. T. Lin, C. W. Chang, H. W. Seo, T. W. Dung, M. C. Chou, S. W. Feng, N. J. Ho, D. Wijesundera, W. K. Chu, and L. W. Tu*, “Growth and characterizations of InxGa1-xN multiple quantum wells without phase separation”, Journal of Electronic Materials, Vol. 42, Issue 5, pp. 838–843, 2013 May. (SCI impact factor 1.635) (Ranking in Physics, Applied49/127)點我看全文

11.      Yu-Hao Lee, Tsun-Cheng Wu, Chao-Wu Liaw, Ten-Chin Wen, Shih-Wei Feng, Jey-Jau Lee, Yao-Ting Wu, and Tzung-Fang Guo*, “Non-doped active layer, benzo[k]fluoranthene-based linear acenes, for deep blue- to green-emissive organic light-emitting diodes”, Organic Electronics, Vol. 14, Issue 7, pp. 1064–1072, 2013 April. (SCI impact factor 3.836) (Ranking in Physics, Applied18/127)點我看全文

12.      Hsiang-Chen Wang*, Chao-Chi Wang, Shih-Wei Feng, Li-His Chen, and Yen-Sheng Lin, “Synthesis of CIGS thin film by solvothermal route,” Optical Materials Express, Vol. 3, Issue 1, pp. 54-66, 2013 Jan. (SCI impact factor 2.616) (Ranking in Optics10/79)點我看全文

13.     廖柏勛、蔡忠憲、馮世維*、張菁文、陳永松、杜立偉、周明奇、陳建勳, “理論模擬銦成份、厚度、與缺陷密度對p-i-n 氮化銦鎵同質單接面太陽能電池之效能影響 ”, 物理雙月刊, 32, pp. 476-483, 2013 April.

2012

14.      Shih-Wei Feng* and Jen-Inn Chyi, “Carrier transport study of TMIn-treated InGaN LEDs by using quantum efficiency and time-resolved electro-luminescence measurements”, Journal of The Electrochemical Society, vol 159, issue 3, pp. H225-H229, 2012 March. (SCI impact factor 2.588) (Ranking in Materials Science, Coatings & Films1/17)點我看全文

15.      Shih-Wei Feng*, Li-Wei Tu, Hsiang-Chen Wang, Qian Sun, and Jung Han, “The role of growth-pressure on the determination of anisotropy properties in nonpolar m-plane GaN”, ECS Journal of Solid State Science and Technology, vol 1, issue 1, R50-R53, 2012 July.點我看全文

16.      Yen-Sheng Lin*, Ho-Hung Kuo, and Shih-Wei Feng, “The formation of quantum dot structures in 30-pair InGaN/GaN multiple quantum Wells after proper thermal annealing treatment”, Journal of Materials ScienceMaterials in Electronics, vol 23, number 10, pp. 1830-1834, 2012 Oct. (SCI impact factor 1.486) (Ranking in Engineering, Electrical & Electronic87/242).點我看全文

 

2011

17.  Shih-Wei Feng*, Chih-Kai Yang, Chih-Ming Lai, Li-Wei Tu, Qian Sun, and Jung Han, “Surface striation, anisotropic in-plane strain, and degree of polarization in nonpolar m-plane GaN grown on SiC”, Journal of Physics DApplied Physics, vol 44, pp 375103 (6 pages), 2011 Sep. (SCI impact factor 2.528) (Ranking in Physics, Applied24/127)點我看全文

18.  Shih-Wei Feng*, Hung-Cheng Lin, Jen-Inn Chyi, Chin-Yi Tsai, C. J. Huang, Hsiang-Chen Wang, Fann-Wei Yang, and Yen-Sheng Lin, “The impact of trimethylindium treatment time during growth interruption on the carrier dynamics of InGaN/GaN multiple quantum wells”, Thin Solid Films, vol 519, pp 6092-6096, 2011 July. (SCI impact factor 1.604) (Ranking in Materials Science, Coatings & Films5/17)點我看全文

19.  Shih-Wei Feng*, Chin-Yi Tsai, Hsiang-Chen Wang, Hung-Cheng Lin, and Jen-Inn Chyi, “Optical properties of InGaN/GaN multiple quantum wells with trimethylindium treatment during growth interruption”, Journal of Crystal Growth, vol 325, pp 41-45, 2011 June. (SCI impact factor 1.552) (Ranking in Crystallography13/23)點我看全文

20.  Ping-Han Wu, Xuan-Yu Yu, Chung-Wei Cheng, Che-Hao Liao, Shih-Wei Feng, and Hsiang-Chen Wang*, “Ultrafast ablation dynamics in fused silica with a white light beam probe”, Optics Express, vol 19, pp 16390-16400, 2011 Aug. (SCI impact factor3.546) (Ranking in Optics4/79)點我看全文

21.  Hsiang-Chen Wang*, Xuan-Yu Yu, Yu-Lun Chueh, Tadas Malinauskas, Kestutis Jarasiunas, and Shih-Wei Feng, “Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample,” Optics Express, vol 19, pp 18893-18902, 2011 Sep. (SCI impact factor 3.546) (Ranking in Optics4/79)點我看全文

 

2010

22.  Shih-Wei Feng*, Chih-Ming Lai, Chien-Hsun Chen, Wen-Ching Sun, and Li-Wei Tu, “Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homo-junction solar cells”, Journal of Applied Physics, vol. 108, pp 093118 (7 pages), 2010 Nov. (SCI impact factor 2.210) (Ranking in Physics, Applied31/127)點我看全文

23.  Hsiang-Chen Wang*, T. Malinauskas, K. Jarasiunas, Shih-Wei Feng, Chu-Chi Ting, Sean Liu, and Chin-Yi Tsai, Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate”, Thin Solid Films, vol 518, pp 7291-7294, 2010 Oct. (SCI impact factor 1.604) (Ranking in Materials Science, Coatings & Films5/17)點我看全文

------------------------------------------------------------------------------------------------------------

24.  Hsien-Tse Tung, Jenn-Ming Song, Shih-Wei Feng, Changshu Kuo, and In-Gann Chen*, “Dependence of Surface Atomic Arrangement of Titanium Dioxide on Metallic Nanowire Nucleation by Thermally Assisted Photoreduction”, Physical Chemistry Chemical Physics, vol 12, pp 740-744, 2010 Jan. (SCI impact factor 3.573) (Ranking in Physics, Atomic, Molecular & Chemical5/33)點我看全文

 

2009

25.  Shih-Wei Feng* and Jung Han, “Quantum-confinement effect on recombination dynamics and carrier localization in cubic InN and InxGa1-xN quantum boxes”, Thin Solid Films, vol 517, pp 3315-3319, 2009 April. (SCI impact factor 1.604) (Ranking in Materials Science, Coatings & Films5/17)點我看全文

26.  Shih-Wei Feng*, Ming-Chang Shih, C. J. Huang, and Chia-Tin Chung, “Impacts of dopant concentration on the carrier transport and recombination dynamics in organic light emitting diodes”, Thin Solid Films, vol 517, pp 2719-2723, 2009 Feb. (SCI impact factor 1.604) (Ranking in Materials Science, Coatings & Films5/17)點我看全文

27.  Shih-Wei Feng*, “Radiative recombination lifetime and exciton dimension in zinc blende AlxGa1-xN/AlN quantum boxes”, Japanese Journal of Applied Physics, vol 48, pp 51001-1-5, 2009 May. (SCI impact factor 1.024) (Ranking in Physics, Applied75/116)點我看全文

28.  Hsiang-Chen Wang*, C. C. Yang, Shih-Wei Feng, Bao-Ping Zhang, and Yusaburo Segawa, “Ultrafast exciton dynamics in a ZnO thin film”, Japanese Journal of Applied Physics, vol 48, pp 22402 (1-55 pages), 2009 Feb. (SCI impact factor 1.024) (Ranking in Physics, Applied75/116)點我看全文

 

2008

29.  Shih-Wei Feng*, “Size-dependant emission properties and intersubband transitions in cubic InN quantum dots and InxGa1-xN clusters”, Thin Solid Films, vol 516, pp 7695-7700, 2008 Sep. (SCI impact factor 1.604) (5/17) (Ranking in Materials Science, Coatings & Films3/18)點我看全文

30.  Shih-Wei Feng*, Li-Wei Tu, Jen-Inn Chyi, and Hsiang-Chen Wang, “Luminescence mechanism and carrier dynamic studies of InGaN-based dichromatic LEDs with UV and blue emissions”, Thin Solid Films, vol 517, pp 909-915, 2008 Nov. (SCI impact factor 1.604) (Ranking in Materials Science, Coatings & Films5/17)點我看全文

31.  Shih-Wei Feng*, Tzong-Liang Tsai, Wen-How Lan, C. J. Huang, and Ming-Chang Shih, “Time-resolved electro-luminescence studies of InGaN blue LEDs with chip size variations”, Phys. Stat. Sol(c), vol 5, pp 2231-2233, 2008 May.點我看全文

32.  Shih-Wei Feng*, Kuei-Hsien Chen, and Chih-Ming Lai, “Quantum-size effect and intersubband transitions in zinc blend AlxGa1-xN quantum cubes embedded in AlN matrix”, Phys. Stat. Sol(c), vol 5 , pp 2336-2338, 2008 May.點我看全文

 

2007

33.  Shih-Wei Feng*, C. C. Pan, Jen-Inn Chyi, Chien-Nan Kuo, and Kuei-Hsien Chen, “Carrier Transport Studies of Dichromatic InGaN-based LEDs with Spacer Bandgap Dependence”, Phys. Stat. Sol(c), vol 4 , pp 2716-2719, 2007 June.點我看全文

34.  Chien-Jung Huang*, Pin-Hsiang Chiu, Yeong-Her Wang, Cheng-Fu Yang, and Shih-Wei Feng, “Electrochemical formation of crooked gold nanorods and gold networked structures by the additive organic solvent”, Journal of Colloid and Interface Science, vol 306, pp 56-65, 2007 Feb. (SCI impact factor 2.443) (Ranking in Chemistry, Physical40/127)點我看全文

 

2006

35.  Y. C. Cheng, S. W. Feng, C. C. Yang, C. T. Kuo, J. S. Tsang, S. Juršėnas*, S. Miasojedovas, and A. Žukauskas, “Effect of Annealing on Optical Properties of InGaN/GaN Multiple Quantum Wells,” Lithuanian Journal of Physics, Vol. 46, No. 3, pp 311-319, 2006.點我看全文

 

2004

36.  Shih-Wei Feng, En-Chiang Lin, C. C. Yang*, Kung-Jeng Ma, Ching-Hsing Shen, Li-Chyong Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing”, J. Applied Physics, Vol. 95, No. 10, pp 5388-5398, 2004. (SCI impact factor 2.064)點我看全文

37.  Yung-Chen Cheng, S. Jursenas, Shih-Wei Feng, C. C. Yang*, Cheng-Ta Kuo, and Jian-Shihn Tsang, “Impact of Post-growth Thermal Annealing on Emission of InGaN/GaN Multiple Quantum Wells,” Phys. Stat. Sol. (a), Vol. 201, no. 2, pp 221-224, 2004. (SCI impact factor 1.458)點我看全文

 

2003

38.  Shih-Wei Feng, Yung-Chen Cheng, Hsiang-Chen Wang, C. C. Yang*, Kung-Jeng Ma, Ching-Hsing Shen, Li-Chyong Chen, J. Y. Lin, and H. X. Jiang “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31”, Applied Physics Letters, Vol. 83, No 10, pp 3906-3908, 2003. (SCI impact factor 3.820).

39.  Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang*, Kung-Jeng Ma, Chih-Chiang Yan, Chen Hsu J. Y. Lin, and H. X. Jiang, “Strong Green Luminescence in Quaternary InAlGaN Thin Films”, Applied Physics Letters, Vol. 82, No 9, pp 1377-1379, 2003. (SCI impact factor 3.820)

40.  Shih-Wei Feng, Yung-Chen Cheng, En-Chiang Lin, Hsiang-Chen Wang, C. C. Yang*, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects on the Optical Properties of High-indium InGaN Epi-layers,” Physica Status Solidi (c), No. 7, pp 2654-2657, 2003.

41.  S. Juršėnas, S. Miasojedovas, G. Kurilčik, A. Žukauskas, Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang, Cheng-Ta Kuo, and Jian-Shihn Tsang, “Quantum-well Thickness Dependence of Stimulated Emission in InGaN/GaN Structures”, Physica Status Solidi (c) 0, No. 7, pp 2610-2613, 2003.

42.  Yung-Chen Cheng, En-Chiang Lin, Shih-Wei Feng, Hsiang-Chen Wang, C. C. Yang*, Kung-Jen Ma, Chang-Chi Pan, and Jen-Inn Chyi, “Characteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions”, Physica Status Solidi (c) 0, pp 2670-2673, 2003.

43.  Yung-Chen Cheng, Shih-Wei Feng, En-Chiang Lin, C. C. Yang*, Cheng-Hua Tseng, Chen Hsu and Kung-Jeng Ma, “Quantum Dot Formation in InGaN/GaN Quantum Well Structures with Silicon Doping and Its Implication in the Mechanisms of Radiative Efficiency Improvement,” Physica Status Solidi (c) 0, No. 4, pp 1093-1096, 2003.

44.  Yen-Sheng Lin, Kung-Jen Ma, Yi-Yin Chung, Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang*, En-Chiang Lin, Cheng-Ta Kuo and Jian-Shihn Tsang, “A Microstructure Study of Post-growth Thermally Annealed InGaN/GaN Quantum Well Structures of Various Well Widths”, J. Crystal Growth, Vol. 252, pp 107-122, 2003.  (SCI impact factor 1.737)

45.  Yi-Yin Chung, Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang*, Chern-Hua Tseng, Cheng Hsu, Yen-Sheng Lin, Kung-Jen Ma, and Jenn-Inn Chyi, “Quantum Well Width Dependence of Optical and Material Properties of Post-growth Thermally Annealed InGaN/GaN Quantum Well Structures with Embedded Quantum Dot Structures”, J. Applied Physics, Vol. 93, No. 12, pp 9693-9696, 2003. (SCI impact factor 2.064)

46.  Yung-Chen Cheng, Cheng-Hua Tseng, Chen Hsu, Kung-Jen Ma, Shih-Wei Feng, En-Chiang Lin, C. C. Yang*, and Jen-Inn Chyi, “Mechanisms for Photon Emission Enhancement with Silicon Doping in InGaN/GaN Quantum Well Structure”, IEEE J. Electronic Materials, Vol. 32, No. 5, pp 375-381, 2003. (SCI impact factor 1.382)

 

2002

47.  Shih-Wei Feng, Yi-Yin Chung, Chih-Wen Liu, Yung-Chen Cheng, C. C. Yang*, Ming-Hua Mao, Yen-Sheng Lin, Kung-Jen Ma, Jen-Inn Chyi, “Multiple-component Photoluminescence Decay Caused by Carrier Transport in InGaN/GaN Quantum Wells with Indium Aggregation Structures,” Applied Physics Letters, Vol. 80, No. 23, pp. 4375-4377, 2002. (SCI impact factor 3.820)

48.  Shih-Wei Feng, Yi-Yin Chung, Yung-Chen Cheng, C. C. Yang*, Yen-Sheng Lin, and Kung-Jen Ma, and Jen-Inn Chyi, “Impact of Localized States on the Recombination Dynamics in InGaN/GaN Quantum Well Structures,” Journal of Applied Physics, Vol. 92, No. 8, pp. 4441-4448, 2002. (SCI impact factor 2.064)

49.  Shih-Wei Feng, Chin-Yi Tsai, Yung-Chen Cheng, Chi-Chih Liao, C. C. Yang*, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi, “Temperature Dependence of Phonon-Replica Transitions in InGaN/GaN Quantum Well Structures,” Optical and Quantum Electronics, Vol.34, No 12, pp 1213-1218, 2002. (SCI impact factor 0.513)

50.  S. Miasojedovas, S. Juršėnas, G. Kurilčik, A. Žukauskas, Shih-Wei Feng, C. C. Yang, Hui-Wen Chuang, Cheng-Ta Kuo, and Jian-Shihn Tsang, “Luminescence of Localized Excitons in InGaN/GaN Multiple Quantum Wells,” Physica Status Solidi (c) 0, No. 1, pp. 483-486, 2002.

51.  Yen-Sheng Lin, Kung-Jen Ma, Cheng Hsu, Yi-Yin Chung, Chih-Wen Liu, Shih-Wei Feng, Yung-Chen Cheng, Ming-Hua Mao, C. C. Yang*, Hui-Wen Chuang, Cheng-ta Kuo, Jian-Shihn Tsang, and Thomas E. Weirich, “Quasi-regular Quantum-dot-like Structure Formation with Post-growth Thermal Annealing in InGaN/GaN Quantum Wells,” Applied Physics Letters, Vol. 80, No. 14, pp. 2571-2573, 2002. (SCI impact factor 3.820)

 

2001

52.  Shih-Wei Feng, Yung-Chen Cheng,, Chi-Chih Liao, Yi-Yin Chung, Chih-Wen Liu, C. C. Yang*, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi, “Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures,” Physica Status Solidi (b), Vol. 228, No. 1, pp. 121-124, 2001. (SCI impact factor 1.344)

53.  Yung-Chen Cheng, Chi-Chih Liao, Shih-Wei Feng, C. C. Yang*, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi, “Activation of p-type GaN with Irradiation of the Second-harmonics of a Q-switched Nd:YAG Laser,” Physica Status Solidi (b), Vol. 228, No. 2, pp. 357-360, 2001. (SCI impact factor 1.344)

54.  Yung-Chen Cheng, Chi-Chih Liao, Shih-Wei Feng, C. C. Yang*, Yen-Sheng Lin, Kung-Jeng Ma, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi, “Laser-induced Activation of p-type GaN,” Japanese Journal of Applied Physics, Vol. 40, Part 1, No. 4A, pp. 2143-2145, 2001. (SCI impact factor 1.138)

 

2000

55.  Yen-Sheng Lin, Kung-Jen Ma, C. Hsu, Shih-Wei Feng, Yung-Chen Cheng, Chi-Chih Liao, C. C. Yang*, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi, “Dependence of Composition Fluctuation on Indium Content in InGaN/GaN Multiple Quantum Wells,” Applied Physics Letters, Vol. 77, no. 6, pp. 2988-2990, 2000. (SCI impact factor 3.820)

56.  Chi-Chih Liao, Shih-Wei Feng, C. C. Yang*, Yen-Sheng Lin, Kung-Jen Ma, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi, “Stimulated Emission Study of InGaN/GaN Multiple Quantum Well Structures,” Applied Physics Letters, Vol. 76, pp. 318-320, 2000. (SCI impact factor 3.820)

57.  C. Tien*, L. Y. Jang, C. Y. Kuo, J. J. Lu, and S. W. Feng, “The 4f-ligand Hybridization in the Evolution of Heavy-fermion Behavior in the Series CeRu2-xNixSi2,” Journal of PhysicsCondens Matter, Vol 12, pp. 8983-8994, 2000. (SCI impact factor 2.332)

 

1998

58.  C. Tien*, S. W. Feng, and J. S. Hwang, “Multiple Phase Transitions in CeRu2(Si1-xGex)2 ,” Journal of PhysicsCondens Matter, Vol 10, pp. 10269-10282, 1998. (SCI impact factor 2.332)

 

(C)International Conference Papers

1. Yu-Siang You, Po-Hsun Liao, Jyong-Di Lai, Shih-Wei Feng*, Jung Han, Fann-Wei Yang, and Kung-Yang Kou, “Quantum-confined Stark Effect on carrier transport and recombination dynamics of N-polar InGaN/GaN MQW LEDs”, The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '15), Yokohama, Japan, April 22-24, 2015.

2. Yu-Siang You, Jyong-Di Lai, Yu-En Huang, Shih-Wei Feng*, Chien-Hsun Chen, and Kung-Yang Kou, “Comparison of Polar c-plane and Nonpolar m-plane InGaN/GaN Multiple Quantum Wells”, The 3rd International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '15), Yokohama, Japan, April 22-24, 2015.

3. Shih-Wei Feng*, Yu-Yu Chen, Yu-En Huang, Yu-Siang You, Chih-Ming Lai, Li-Wei Tu, and Jung Han, “Anisotropic strain relaxation and the resulting degree of polarization in nonpolar a-plane GaN”, 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014), National Sun Yat-Sen University, Kaohsiung, Dec 14-19, 2014.

4. Y. T. Hsu, T. Y. Lin, W. H. Lan*, S. Y. Lee, C. C. Yu, J. C. Lin, W. J. Lin, K. F. Huang, M. C. Shih, C. J. Huang, and S. W. Feng, “The fabrication of granular ZnO on LEDs by spray pyrolysis”, 10th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2014), National Sun Yat-Sen University, Kaohsiung, Dec 14-19, 2014.

5. Shih-Wei Feng*, Yu-Yu Chen, Yu-En Huang, Yu-Siang You, Chih-Ming Lai, Li-Wei Tu, and Jung Han, “Anisotropic strain relaxation and degree of polarization of nonpolar a-plane GaN grown on r-sapphire substrate by one- and two-step growth”, 2014 International Conference on Information Technology and Engineering (ICTAE 2014), Hong Kong, Oct 2-4, 2014.

6. Kuang-Yang Kou*, Yu-En Huang, Chien-Hsun Chen, Yu-Siang You, and Shih-Wei Feng, “Investigations of Lattice Strain Relaxation and Absorbance in Polar (0001) c-plane B-doped ZnO with Different Thickness”, 2014 International Conference on Information Technology and Engineering (ICTAE 2014), Hong Kong, Oct 2-4, 2014.

7. Yu-En Huang, Po-Hsun Liao, Yu-Siang You, Shih-Wei Feng*, and Jung Han, “Carrier transport study of Ga-polar and N-polar InGaN LEDs by using time-resolved electroluminescence measurement”, International Workshop on Nitride Semiconductors 2014 (IWN 2014), Wrocław, Poland, Aug 24-29, 2014.

8. Yu-En Huang, Yu-Siang You, Shih-Wei Feng*, Benjamin Leung, Christopher D. Yerino, and Jung Han “Anisotropic Characteristics of Semi-polar  GaN grown on High Temperature (HT)-AlN and Low Temperature (LT)-GaN Buffer Layers”, International symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials (ISPlasma 2014), Meijo University, Nagoya, Japan, March 2-6, 2014.

9. Yu-En Huang, Yu-Siang You, and Shih-Wei Feng*, “Optical characteristics of regularly patterned core-shell GaN/InGaN quantum well nanorad arrays”, International symposium on Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials (ISPlasma 2014), Meijo University, Nagoya, Japan, March 2-6, 2014.

10. Po-Hsun Laio, Chung-Hsien Tsai ,Yu-Ru Su, Shih-Wei Feng*, Chih-Ming Lai, and Li-Wei Tu, “Numerical simulations of the current-matching effect on the performance of InGaN/Si tandem cells”, International Workshop on Nitride Semiconductors 2012 (IWN 2012), Sapporo, Japan, Oct 14-19, 2012.

11. Po-Hsun Laio, Chung-Hsien Tsai, Yu-Yu Chen, Shih-Wei Feng*, Benjamin Leung, Christopher D. Yerino, and Jung Han, “Anisotropic in-plane strains and degree of polarization in nonpolar a-plane GaN on r-sapphire substrate”, International Workshop on Nitride Semiconductors 2012 (IWN2012), Sapporo, Japan, Oct 14-19, 2012.

12. Shih-Wei Feng*, Yu-Ru Su, Chih-Ming Lai, and Li-Wei Tu, “Theoretical simulations of the performance of InGaN p-n junction solar cells”, Progress in Electromagnetics Research Symposium (PIERS), Kuala Lumpur, Malaysia, March 27-30, 2012 (Oral).

13. Guan-Huang Wu, Ping-Han Wu, Xuan-Yu Yu, Chung-Wei Cheng, Che-Hao Liao, Shih-Wei Feng, and Hsiang-Chen Wang*, “Ultrafast ablation dynamics in fused silica with a white light beam probe”, Progress in Electromagnetics Research Symposium (PIERS), Kuala Lumpur, Malaysia, March 27-30, 2012 (Oral).

14. Xusn-Yu Yu, Hsiang-Chen Wang*, Yu-Lun Chueh, Tadas Malinauskas, Kestutis Jarasiunas, Shih-Wei Feng, “Suppression of Surface Recombination in an InGaN/GaN Multiple Quantum Well sample by Surface Plasmon Coupling”, Progress in Electromagnetics Research Symposium (PIERS), Kuala Lumpur, Malaysia, March 27-30, 2012 (Oral).

15. Yu-Ru Su, Shih-Wei Feng*, Chih-Ming Lai, Yu-Yu Chen, Kuo-Lun Kao, Chung-Hsien Tsai, and L. W. Tu,  “Theoretical Simulations of the Performance of p-n InGaN Single Homo-junction Solar Cells”, The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow (Scottish Exhibition and Conference Centre), U. K., July 10-15, 2011.

16. Kuo-Lun Kao, Shih-Wei Feng*, Yu-Yu Chen, Yu-Ru Su, Chung-Hsien Tsai, and T. C. Lu,  “Anisotropic Optical Characteristics of a-plane InGaN/GaN Multiple Quantum Wells”, The 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow (Scottish Exhibition and Conference Centre), U. K., July 10-15, 2011.

17. Shih-Wei Feng*, Yu-Ru Su, Yu-Yu Chen, Kuo-Lun Kao, Chih-Ming Lai, P. H. Tseng, Y. S. Chen, L. W. Tu, M. C. Chou, C. H. Chen, and W. C. Sun, “Theoretical Simulations of the Performance of p-i-n InGaN Homo-junction Solar Cells”, International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa, Florida, USA, Sep 19-24, 2010.

18. Po-Hang Tseng, Kai-Yin Zheng, Yuan-Ting Lin, Zhao-Wei Huang, Jun-Hao Wang, Yuan-Shao Lin, Yu-Ru Su, Y. S. Chen, M. C. Chou, Shih-Wei Feng, Chien-Hsun Chen, Wen-Ching Sun, Chung-Wen Lan, and Li-Wei Tu*, “High Indium Content InGaN for Tandem Solar Cells grown by Plasma Assisted Molecular Beam Epitaxy”, International Workshop on Nitride Semiconductors 2010 (IWN2010), Tampa, Florida, USA, Sep 19-24, 2010.

19. Shih-Wei Feng*, Yu-Ru Su, Chih-Ming Lai, P. H. Tseng, Y. S. Chen, L. W. Tu, M. C. Chou, C. H. Chen, and W. C. Sun, “Theoretical Simulations of the Performance of p-i-n InGaN Single Homo-junction Solar Cells”, the 35th IEEE Photovoltaic Specialist Conference, Hawaiian Convention Center in Hawaii, USA, June 20-25, 2010.

20. L. W. Tu*, P. H. Tseng, W. C. Yen, S. W. Feng, C. W. Lan, C. H. Chen, and W. C. Sun, “Indium Gallium Nitride on Silicon Solar Cell Grown by Plasma Assisted Molecular Beam Epitaxy”, 12th International Conference on Modern Materials and Technologies-5th Forum on New Materials, CIMTEC2010, Montecatini Terme, Tuscany, Italy, June 13-18, 2010.

21. Shih-Wei Feng*, Chih-Kai Yang, Li-Wei Tu, Qian Sun, and Jung Han, “Anisotropic Properties of Nonpolar M-plane GaN”, Photonics West 2010, San Francisco, USA, January 23-28, 2010.

22. Chin-Ming Chen, Jian-Sheng Wu, Shih-Wei Feng, Sean Liu, and Hsiang-Chen Wang*, “Finite Difference Time Domain Analysis of Ultra-broadband Enhanced Absorption of Silicon Surface with Nanostructures”, Photonics West 2010, San Francisco, USA, January 23-28, 2010.

23. Shih-Wei Feng*, Chih-Kai Yang, L. W. Tu, Qian Sun, and Jung Han,  “Anisotropic Strain Relaxation of m-plane GaN”, The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju Island (ICC Jeju), Korea, October 18-23, 2009.

24. Shih-Wei Feng*, Shi-Kai Lin, Hung-Cheng Lin, Jen-Inn Chyi, Hsiang-Chen Wang, and C. H. Chen,  “Carrier Dynamics Studies of InGaN Green Light Emitting Diodes with Ethylindium Treatment”, The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju Island (ICC Jeju), Korea, October 18-23, 2009.

25. P. H. Tseng, P. L. Huang, G. H. Lee, Shih-Wei Feng, C. H. Chen, W. C. Sun, and L. W. Tu*,  “Indium Gallium Nitride Film Grown on Silicon Solar Cell Structure by Plasma Assisted Molecular Beam Epitaxy”, The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju Island (ICC Jeju), Korea, October 18-23, 2009.

26. Shih-Wei Feng*, Qian Sun, Jung Han, Chih-Kai Yang, Shi-Kai Lin, and L. W. Tu, “Effect of Ammonia Flow Rate on the Surface Morphology and Polarization Anisotropy of m-plane GaN Films on m-SiC Substrates”, Second International Symposium on Growth of III-Nitrides, Laforet Shuzenji, Izu, Japan, July 6-9, 2008.

27. Kun-Hong Lin, Cheng-Hung Wu, Yen-Sheng Lin*, and Shih-Wei Feng, “The different strain energy releasing under various growth method of InGaN/GaN multiple quantum wells”, Second International Symposium on Growth of III-Nitrides, Laforet Shuzenji, Izu, Japan, July 6-9, 2008.

28. Shih-Wei Feng*, Tzong-Liang Tsai, Wen-How Lan, C. J. Huang, and Ming-Chang Shih,“Time-Resolved Electro-Luminescence Studies of InGaN Blue LEDs with Chip Size Variations”, The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, USA, Sep 2007.

29. Shih-Wei Feng* and Kuei-Hsien Chen, “Quantum-confinement Effect and Intersubband Transitions in Zinc Blend AlxGa1-xN/AlN Quantum Cubes", The 7th International Conference on Nitride Semiconductors (ICNS-7), Las Vegas, USA, Sep 2007.

30. Shih-Wei Feng*, C. C. Pan, Jen-Inn Chyi, Chien-Nan Kuo, and Kuei-Hsien Chen, “Carrier Transport Studies of Dichromatic InGaN-based LEDs with Spacer Bandgap Dependence”, IWN 2006, Kyoto, Japan, October 2006.

31. Shih-Wei Feng*, Chia-Tin Chung, Ching-In Wu, Ming-Chang Shih, and C. J. Huang, “Studies of Carrier Dynamics and Luminescence Mechanisms of C545T-doped Alq3”, SID 2006, San Francisco, USA, June 2006.

32. Shih-Wei Feng*, Chia-Wen Liu, Chang-Chi Pan, Chi-Lun Kao, and Jen-Inn Chyi, “Carrier Dynamics Studies of InGaN-based UV-blue Two-Color LEDs”, CLEO PR, Tokyo, Japan, July 2005.

33.  Shih-Wei Feng*, C. C. Yang, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “InGaN Quantum Dot Structures and Their Optical Properties in InGaN Thin Films,” Photonics West, San Jose, USA, January 2004.

34. Shih-Wei Feng, C. C. Yang*, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Optical and Nano-structures of InGaN with average Indium Contents Higher Than 30%,” 2003 MRS fall meeting, Boston, USA, December 2003.

35. Shih-Wei Feng*, Yung-Chen Cheng, En-Chiang Lin, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal Annealing Effects on the Optical Properties of High-indium InGaN Epi-layers,” The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 2003.

36. Shih-Wei Feng*, Yung-Chen Cheng, En-Chiang Lin, Hsiang-Chen Wang, C. C. Yang, Kung-Jen Ma, Ching-Hsing Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Yellow and Red Luminescence Characteristics in InGaN Films of High Indium Contents,” The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May 2003.

37. Yung-Chen Cheng, En-Chiang Lin, Shih-Wei Feng, Hsiang-Chen Wang, C. C. Yang*, Kung-Jen Ma, Shih-Chen Shi, L. C. Chen, Chang-Chi Pan, and Jen-Inn Chyi, “Effects of thermal annealing on InGaN/GaN quantum well structures with silicon doping,” The Fifth Pacific Rim Conference on Lasers and Electro-Optics (CLEO/PR), Taipei, Taiwan, December 15-19, 2003.

38. Yung-Chen Cheng, Shih-Wei Feng, Tsung-Yi Tang, Yen-Cheng Lu, Chi-Feng Huang, En-Chiang Lin, Shih-Jiun Lin, Chih-Chung Deng, Cheng-Ming Wu, Meng-Kuo Chen, Jiun-Yang Chen, and C. C. Yang*, “Self-organized InGaN Quantum Dots,” JAPAN-TAIWAN Joint Seminar: Toward Formation New Network Between Physics and Chemistry on the Frontiers of Material Science, Taipei, Taiwan, Dec. 5-7, 2003. (invited)

39. Yung-Chen Cheng, Shih-Wei Feng, Tsung-Yi Tang, Yen-Cheng Lu, Chi-Feng Huang, En-Chiang Lin, Shih-Jiun Lin, Chih-Chung Deng, Cheng-Ming Wu, Meng-Kuo Chen, Jiun-Yang Chen, and C. C. Yang*, “Optical and material properties of self-organized InGaN quantum dots,” Japan-Taiwan Optoelectronics Workshop, Tainan, Taiwan, Nov. 19-20, 2003. (invited)

40. Yung-Chen Cheng, En-Chiang Lin, Shih-Wei Feng, Hsiang-Chen Wang, C. C. Yang*, Kung-Jen Ma, Shih-Chen Shi, L. C. Chen, Chang-Chi Pan, and Jen-Inn Chyi, “Effects of post-growth thermal annealing of InGaN/GaN QWs with silicon doping,” The 5th International Conference on Nitride Semiconductors (ICNS-5), Nara, Japan, May. 25-30, 2003.

41. Yung-Chen Cheng, Cheng-Hua Tseng, Chen Hsu, Shih-Wei Feng, Yi-Yin Chung, En-Chiang Lin, C. C. Yang*, Kung-Jen Ma, and Yen-Sheng Lin, “Quantum dot formation with silicon doping in InGaN/GaN quantum well Structures and its implications in radiative mechanisms,” Photonics West, San Jose, USA, Jan. 25-31 2003.

42. Yi-Yin Chung, Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang*, Yen-Sheng Lin, Kung-Jeng Ma, Hui-Wen Chuang, Cheng-Ta Kuo, and Jian-Shihn Tsang, “Optical and Material Characteristics of InGaN/GaN Quantum Well Structures with Embedded Quantum Dots,” Photonics Asia, Shanghai, China, October 2002.

43. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang*, Yen-Sheng Lin, Kung-Jen Ma, and Cheng Hsu, Carrier Transport in Indium-aggregated InGaN/GaN Quantum Well Structures,” International Workshop on Nitride Semiconductors (IWN), Aachen, Germany, July 2002.

44. Yi-Yin Chung, Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang*, Yen-Sheng Lin, Kung-Jeng Ma, Hui-Wen Chuang, Cheng-Ta Kuo, and Jian-Shihn Tsang, “Thermal Annealing Effects of InGaN/GaN Multiple Quantum Well Structures with Different Quantum Well Widths,” International Workshop on Nitride Semiconductors (IWN), Aachen, Germany, July 2002.

45. Yung-Chen Cheng, Shih-Wei Feng, Yi-Yin Chung, C. C. Yang*, Cherng-Hua Tseng, Chen Hsu, Yen-Sheng Lin, Kung-Jeng Ma, and Jen-Inn Chyi, “Optical and Material Characteristics of InGaN/GaN Quantum Well Structures with Various Silicon Doping Conditions,” International Workshop on Nitride Semiconductors (IWN), Aachen, Germany, July 2002.

46. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Chih-Wen Liu, Ming-Hua Mao, C. C. Yang*, Yen-Sheng Lin, Kung-Jen Ma, and Jen-Inn Chyi, “Dynamic carrier relaxation in InGaN/GaN quantum well structures,” Optoelectronics 2002, Photonics West, San Jose.

47. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Ming-Hua Mao, C. C. Yang*, Yen-Sheng Lin, Kung-Jen Ma, and Jen-Inn Chyi, “Carrier dynamics in InGaN/GaN quantum well structures,” Photonics and Applications –Design, Fabrication, and Characterization of Photonics Devices II, Singapore, November-December 2001.

48. Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Chih-Wen Liu, C. C. Yang*, Yen-Sheng Lin, Chen Hsu, Kung-Jeng Ma, and Jen-Inn Chyi, “Two-component Phtoluminescence Decay in InGaN/GaN Multiple Qunatum Well Structures,” The Fourth International Conference on Nitride Semiconductors, Denvor, July 2001.

49. Shih-Wei Feng, Yung-Chen Cheng, C. C. Yang*, Chin-Yi Tsai, Yen-Sheng Lin, Chen Hsu, Kung-Jen Ma, and Jen-Inn Chyi, “Two-component Photoluminescence Decay and Carrier Localization in InGaN/GaN Multiple Quantum Well Structures,” The Pacific Rim Conference on Lasers and Electro-Optics, Chiba, Japan, July 2001.

50. C. C. Yang*, Shih-Wei Feng, Yen-Sheng Lin, Yung-Chen Cheng, Chi-Chih Liao, Chin-Yi Tsai, Kung-Jeng Ma, and Jen-Inn Chyi, “On Indium Segregation in InGaN/GaN Quantum Well Structures,” SPIE Meeting on Ultrafast Phenomena in Semiconductors V, San Jose, US, January 2001. (invited)

51. Shih-Wei, Feng, Chi-Chih Liao, C. C. Yang*, Yen-Sheng Lin, Kung-Jen Ma, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi, “Optical Characterization for Indium Aggregation Study in InGaN/GaN Multiple Quantum Wells,” International Workshop on Nitride Semiconductors (IWN), Nagoya, Japan, September, 2000.

52. Shih-Wei Feng, Yen-Sheng Lin, Chi-Chih Liao, Kung-Jen Ma, C. C. Yang*, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi, “Optical and Material Studies of Indium Compositional Fluctuations in InGaN/GaN Multiple Quantum Well Structures,” European Conference on Lasers and Electro-Optics, Nice, France, September, 2000.

53. Chi-Chih Liao, Shih-Wei Feng, C. C. Yang*, Yen-Sheng Lin, Kung-Jen Ma, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi, “Characteristics of Two Stimulated Emission Peaks in InGaN/GaN Multiple Quantum Well Structures,” Conference on Lasers and Electro-Optics, San Francisco, May 2000.

(D)Domestic Conference Papers

1.      Yu-Siang You, Yu-En Huang, Jyong-Di Lai, Shih-Wei Feng*, Chien-Hsun Chen, and Kuang-Yang Kou*, “Comparison of Polar c-plane and Nonpolar m-plane InGaN/GaN Multiple Quanntum Wells”, Annual Meeting of ROC Physics Society, NTHU (Hsinchu), January 28-30, 2015.

2.      Yu-En Huang, Yu-Siang You, and Shih-Wei Feng*, “Photoluminescence Studies of InGaN/GaN Nanorods grown by Metal-organic Chemical Vapor Deposition”, Annual Meeting of ROC Physics Society, NCHU (Taichung), January 21-23, 2014.

3.      Po-Hsun Laio, Chung-Hsien Tsai, Yu-En Huang, Shih-Wei Feng*, Benjamin Leung, Christopher D. Yerino, and Jung Han, “Investigations of Anisotropic in-plane Strains and Degree of Polarization in Semipolar  GaN grown on m-sapphire Substrate”, Annual Meeting of ROC Physics Society, NDHU (Hualien), January 29-31, 2013.

4.      Chung-Hsien Tsai, Po-Hsun Laio, Yu-Yu Chen, Shih-Wei Feng*, Benjamin Leung, Christopher D. Yerino, and Jung Han, “Anisotropic Characteristics of a-plane GaN grown on r-sapphire”, Annual Meeting of ROC Physics Society, NCCU (Chiayi), January 17-19, 2012.

5.      Yu-Ru Su, Shih-Wei Feng*, Chih-Ming Lai, Yu-Yu Chen, Kuo-Lun Kao, Chung-Hsien Tsai, and L. W. Tu, “Numerical Simulations of the Performance of InGaN p-n Junction Solar Cells”, The 7th joint meeting of Chinese physicists worldwide (OCPA7), National Sun Yat-sen University (Kaohsiung),  Aug 1-5, 2011.

6.      Ting-Kuo Tseng, Chun-Chlao Lin, Yi, Lan Tseng, Yen-Sheng Lin, Shih-Wei Feng, “Study of Absorption Improved by Double Surface Coarsening Treatment on Silicon Base Solar Cell”, 2011 Electronic Technology Symposium, I-Shou University (Kaohsiung), June 10, 2011.

7.      Yi-Lan Tseng, Wei-Chih Tseng, Ting-Kuo Tseng, Yen-Sheng Lin, Shih-Wei Feng, “Study of Anti-reflection Improved on Silicon Base Solar Cell by SiO2/TiO2 Sputtering”, 2011 Electronic Technology Symposium, I-Shou University (Kaohsiung), June 10, 2011.

8.      Shih-Wei Feng*, Kuo-Lun Kao, Yu-Yu Chen, Yu-Ru Su, Chung-Hsien Tsai, Yen-Hung Chen, and T. C. Lu, “Anisotropic Optical Characteristics of a-plane InGaN/GaN Multiple Quantum Wells with Indium Content Dependence”, Annual Meeting of ROC Physics Society, NTNU (Taipei), January 25-27, 2011.

9.      Yu-Yu Chen, Shih-Wei Feng*, Kuo-Lun Kao, Yu-Ru Su, Chung-Hsien Tsai, Yen-Hung Chen, Q. Sun, and J. Han, “Effects of the Growth Time of Low-temperature Buffer Layer on the Sample Quality of N-face GaN”, Annual Meeting of ROC Physics Society, NTNU (Taipei), January 25-27, 2011.

10.  P. H. Tseng, P.V. Wadekar, K. Y. Zheng, C. W. Chang, C. Y. Chang,Y. T. Lin, Y. R. Su, Y. S. Chen, S. W. Feng, M. C. Chou, and L. W. Tu, “High indium content III-Nitirde p-i-n Structural Solar Cells”, Annual Meeting of ROC Physics Society, NTNU (Taipei), January 25-27, 2011.

11.  P. H. Tseng, K. Y. Zheng, Y. S. Chen, M. C. Chou, S. W. Feng, and L. W. Tu, “High Indium Content InGaN p-i-n Structural Solar Cells”, Optics and Photonics Taiwan 2010, Southern Tainan University, Tainan, Dec 3-4, 2010.

12.  Yu-Ru Su, Yu-Yu Chen, Kuo-Lun Kao, Shih-Wei Feng*, Chih-Ming Lai, P. H. Tseng, L. W. Tu, and C. H. Chen, “Theoretical Simulations of the Performance of p-i-n InGaN Homojunction Solar Cells”, 28th Symposium on Spectroscopic Technologies and Surface Sciences, Nantou, July 14-16, 2010.

13.  P. H. Tseng, Y. S. Chen, M. C. Chou, S. W. Feng, C. H. Chen,W. L. Chang,W. C. Sun, C. W. Lan, and L. W. Tu, “Nitride-Silicon Hybrid Structural Solar Cells Grown by Molecular Beam Epitaxy”, MBE Taiwan 2010, National Taiwan University, Taipei, May 24-25, 2010.

14.  Shih-Wei Feng*, Chih-Ming Lai, C. H. Chen, W. C. Sun, and L. W. Tu, “Numerical Simulation of InGaN P-i-n Single Homo-junction Solar Cells”, Annual Meeting of ROC Physics Society, NCKU (Tainan), February 2-4, 2010.

15.  Shih-Wei Feng*, Chih-Ming Lai, C. H. Chen, W. C. Sun, and L. W. Tu, “Numerical Simulations of InGaN Single Junction Solar Cell”, TACT 2009 International Thin Films Conference, Taipei, R.O.C., Dec 14-16, 2009.

16.  Hsiang-Chen Wang*, Tsung-Yi Tang, C. C. Yang, T. Malinauskas, K. Jarasiunas, Shih-Wei Feng, “Four wave mixing study on coalescence overgrowth of GaN nanocolumns on sapphire”, TACT 2009 International Thin Films Conference, Taipei, R.O.C., Dec 14-16, 2009.

17.  Hsiang-Chen Wang*, T. Malinauskas , K. Jarasiunas, Shih-Wei Feng, Chu-Chi Ting, Sean Liu, “Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate”, TACT 2009 International Thin Films Conference, Taipei, R.O.C., Dec 14-16, 2009.

18.  Jheng-Yi Lin, Shi-Xian Huang, Jian-Sheng Wu, Hsiang-Chen Wang*, Shih-Wei Feng, Sean Liu, “Identification of Multiple-beam Interference”, Optics and Photonics Taiwan 2009, Taipei, R.O.C., December 11-12, 2009.

19.  Zong-Hao Lin, Yu-Chen Kuo, Hsiang-Chen Wang*, Shih-Wei Feng, Chu-Chi Ting, “Multi-color light emitting diodes array structure with uniformity color mixing”, Optics and Photonics Taiwan 2009, Taipei, R.O.C., December 11-12, 2009.

20.  Chin-Ming Chen, Jian-Sheng Wu, Hsiang-Chen Wang*, Shih-Wei Feng, and Sean Liu, “Enhancement of light absorption on silicon surface of solar cells with a new type graded-index change micro-structure”, Optics and Photonics Taiwan 2009, Taipei, R.O.C., December 11-12, 2009.

21.  P. H. Tseng, M. F. Hsieh, W.C. Yen, S. W. Feng, C. H. Chen, W. C. Sun, and L. W. Tu*, “Hetero-Structural InGaN/Silicon Solar Cells Grown by Molecular Beam Epitaxy”, Optics and Photonics Taiwan 2009, Taipei, R.O.C., December 11-12, 2009.

22.  Yen-Sheng Lin*, Kun-Hong Lin, Chen-Hung Wu, Kuang-Tsung Shiao, Shih-Wei Feng,“Optical quality improved in InGaN/GaN Multiple Quantum Wells by proper thermal annealing’, Optics and Photonics Taiwan 2009, Taipei, R.O.C., December 11-12, 2009.

23.  Yen-Sheng Lin*, Ho-Hung Kuo, Shih-Wei Feng, “Stain energy effect on the micro-structural and optical properties of InGaN/GaN multiple quantum wells”, Optics and Photonics Taiwan 2009, Taipei, R.O.C., December 11-12, 2009.

24.  陳泓叡, 洪瑞華*, 林師婷, 廖文毅, 吳明憲, 馮世維, “不同銦含量對於氮化銦鎵太陽能電池元件之特性研究”, Optics and Photonics Taiwan 2009, Taipei, R.O.C., December 11-12, 2009.

25.  Shih-Wei Feng*, Chih-Kai Yang, Shi-Kai Lin, Li-Wei Tu, Qian Sun, and Jung Han, “Anisotropic Strain Distribution of M-plane GaN”, Symposium on Spectroscopic Technologies and Surface Sciences, Nantou, R.O.C., July 2009.

26.  董憲澤, 宋振銘, 陳引幹*, 馮世維, “從優選向對二氧化鈦薄膜光觸媒性質之影響”, 中華民國陶業研究學會2009年會暨學術論文發表會, Taipei, Taiwan, May 22, 2009.

27.  Chih-Kai Yang, Shi-Kai Lin, Shih-Wei Feng*, Li-Wei Tu, Cheng-Ying Ho, Po-Han Tseng, and Yi-Chou Tu, Qian Sun, and Jung Han, “In-plane Anisotropic Strain and Stacking Fault-contributed Emissions of m-GaN”, Annual Meeting of ROC Physics Society, Nation Changhua University of Education (Changhua), January 19-21, 2009.

28.  Shih-Wei Feng*, Chih-Kai Yang, Shi-Kai Lin, Li-Wei Tu, Jen-Inn Chyi, and Hsiang-Chen Wang, “Cathodoluminescence and Carrier Dynamic Studies of InGaN-Based Dichromatic Light Emitting Diodes”, Optics and Photonics Taiwan 2008, Taipei, R.O.C., December 2008.

29.  Yen-Sheng Lin*, Kun-Hong Lin, Cheng-Hung Wu, and Shih-Wei Feng, “Effect of Strain Energy on the InGaN/GaN Multiple Quantum Wells with Various Growth Methods”, Optics and Photonics Taiwan 2008, Taipei, R.O.C., December 2008.

30.  Jian-Sheng Wu, Shi-Xian Huang, Hsiang-Chen Wang*, Shih-Wei Feng, Sean Liu, and Shuan-Yu Huang, “Finite Difference Time Domain Analysis of Ultra-Broadband Enhanced Absorption of Metal Surface with Nanostructures”, Optics and Photonics Taiwan 2008, Taipei, R.O.C., December 2008.

31.  Shih-Wei Feng*, Shih-Chen Shi, L. C. Chen, Chang-Chi Pan, Jen-Inn Chyi, and Kuei-Hsien Chen, “Carrier Dynamics Studies of InGaN-based LEDs with Two Emissions at UV and Blue Spectral Ranges, Annual Meeting of ROC Physics Society, Taipei, February 2006.

32.  Shih-Wei Feng*,  M. S. Hu, L. S. Hong, C. H. Shen, L. C. Chen, and K. H. Chen, “The Optical and Material Studies of Nitride-based Quantum-wires,” Annual Meeting of ROC Physics Society, Kaohsiung, February 2005.

33.  Shih-Wei Feng*, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang, Kung-Jeng Ma, and Chen Hsu, “Influences of Quantum Dot Formation on Optical Properties in InGaN/GaN Quantum Well Structures”, Optics and Photonics Taiwan 2002, Taipei, R.O.C., December 2002.

34.  Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, C. C. Yang*, Kung-Jeng Ma, Chen Hsu, J. Y. Lin, and H. X. Jiang, “Green Luminescence in Quaternary InAlGaN Thin Films”, Optics and Photonics Taiwan 2002, Taipei, R.O.C., December 2002.

35.  Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Chih-Wen Liu, Ming-Hua Mao, C. C. Yang*, Yen-Sheng Lin, Kung-Jeng Ma, and Cheng Hsu, “Effects of carrier transport on luminescence lifetime in InGaN/GaN quantum wells with indium aggregations,” Annual Meeting of ROC Physics Society, Taichung, Taiwan, R.O.C., February 2002.

36.  Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Chih-Wen Liu, C. C. Yang*, Yen-Sheng Lin, Kung-Jen Ma, Cheng Hsu, Chang-Cheng Chuo, Chia-Ming Lee, and Jen-Inn Chyi, “Dynamic carrier relaxation in InGaN/GaN quantum well structures,” Optics and Photonics Taiwan 2001, Kaohsiung, R.O.C., December 2001.

37.  C. C. Yang*, Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Chih-Wen Liu, Chin-Yi Tsai, Yen-Sheng Lin, Chen Hsu, Kung-Jeng Ma, and Jen-Inn Chyi, Composition Fluctuation and Carrier Localization in InGaN/GaN Multiple Quantum Well Structures,” The Fifth Chinese Optoelectronics Meeting, Xiamen, China, April 2001.

38.  Shih-Wei Feng, Yung-Chen Cheng, Yi-Yin Chung, Chih-Wen Liu, Chin-Yi Tsai, C. C. Yang*, Yen-Sheng Lin, and Kung-Jen Ma, ”Carrier Location in InGaN/GaN Multiple Quantum Well Structures,” Annual Meeting of R.O.C. Physics Society, Taipei, R.O.C., Feb. 2001.

39.  S. W. Feng, C. Y. Tsai, Y. C. Cheng, C. C. Liao, C. C. Yang*, Y. S. Lin, K. J. Ma, and J. I. Chyi, “Phonon-Assisted Transitions in InGaN/GaN Quantum Well Structures,” International Photonics Conference 2000, Hsinchu, R.O.C., December 2000.

40.  S. W. Feng, C. Y. Tsai, Y. C. Cheng, C. C. Liao, C. C. Yang*, Y. S. Lin, K. J. Ma, and J. I. Chyi, “Carrier Localization in InGaN/GaN Multiple Quantum Well Structures,” International Photonics Conference 2000, Hsinchu, R.O.C., December 2000.

 

瀏覽數  
將此文章推薦給親友
請輸入此驗證碼
Voice Play
更換驗證碼